Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design

IEEE Transactions on Microwave Theory and Techniques

Volumn 52, Issue 11, 2004, Pages 2585-2592

  Cabral, Pedro M ^a   Pedro, José C ^a   Carvalho, Nuno B ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

Intermodulation distortion (IMD); Modeling; Power amplifiers (PAs); Power transistors

Indexed keywords

BANDWIDTH; CHANNEL CAPACITY; GATES (TRANSISTOR); INTERMODULATION; MICROWAVES; NONLINEAR DISTORTION; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS;

CHANNEL DISTORTION; INTERMODULATION DISTORTION (IMD); POWER TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 9244264946     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.837196     Document Type: Article

References (18)

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