-
1
-
-
0024048518
-
-
vol. 36, pp. 1151-1159, July 1988.
-
G. Dambrine, A. Cappy, F. Héliodore, and E. Playez, A new method for determining the FET small-signal equivalent circuit, IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1151-1159, July 1988.
-
A New Method for Determining the FET Small-signal Equivalent Circuit, IEEE Trans. Microwave Theory Tech.
-
-
Dambrine, G.1
Cappy, A.2
Héliodore, F.3
Playez, E.4
-
2
-
-
0025465290
-
-
vol. 38, pp. 891-895, July 1990.
-
M. Berroth and R. Bosch, Broad-band determination of the FET smallsignal equivalent circuit, IEEE Trans. Microwave Theory Tech., vol. 38, pp. 891-895, July 1990.
-
Broad-band Determination of the FET Smallsignal Equivalent Circuit, IEEE Trans. Microwave Theory Tech.
-
-
Berroth, M.1
Bosch, R.2
-
4
-
-
0015599920
-
-
20, pp. 213-220, Mar. 1973.
-
P. L. Hower and N. G. Bechtel, Current saturation and small-signal characteristics of GaAs field-effect transistors, IEEE Trans. Electron Devices, vol. ED20, pp. 213-220, Mar. 1973.
-
Current Saturation and Small-signal Characteristics of GaAs Field-effect Transistors, IEEE Trans. Electron Devices, Vol. ED
-
-
Hower, P.L.1
Bechtel, N.G.2
-
6
-
-
0026185658
-
-
vol. 39, pp. 1243-1246, July 1991.
-
R. Anholt and S. Swirhun, Equivalent-circuit parameter extraction for cold GaAs MESFET's, IEEE Trans. Microwave Theory Tech., vol. 39, pp. 1243-1246, July 1991.
-
Equivalent-circuit Parameter Extraction for Cold GaAs MESFET's, IEEE Trans. Microwave Theory Tech.
-
-
Anholt, R.1
Swirhun, S.2
-
8
-
-
0024983189
-
-
1-24, 1990, pp. 359-362.
-
E. Arnold, M. Golio, M. Miller, and B. Beckwith, Direct extraction of GaAs MESFET intrinsic element and parasitic inductance values, in IEEE MTTS Dig., 1-24, 1990, pp. 359-362.
-
Direct Extraction of GaAs MESFET Intrinsic Element and Parasitic Inductance Values, in IEEE MTTS Dig.
-
-
Arnold, E.1
Golio, M.2
Miller, M.3
Beckwith, B.4
-
9
-
-
0026889212
-
-
vol. 40, pp. 1410-1421, July 1992.
-
I. Corbella, J. M. Legido, and G. Naval, Instantaneous model of a MESFET for use in linear and non linear circuit simulations, IEEE Trans. Microwave Theory Tech., vol. 40, pp. 1410-1421, July 1992.
-
Instantaneous Model of a MESFET for Use in Linear and Non Linear Circuit Simulations, IEEE Trans. Microwave Theory Tech.
-
-
Corbella, I.1
Legido, J.M.2
Naval, G.3
-
10
-
-
0027540382
-
-
vol. 41, pp. 199-205, Feb. 1993.
-
K. Nagatomo, Y. Daido, M. Shimizu, and N. Okubo, GaAs MESFET characterization using least squares approximation by rational func-lions, IEEE Trans. Microwave Theory Tech., vol. 41, pp. 199-205, Feb. 1993.
-
GaAs MESFET Characterization Using Least Squares Approximation by Rational Func-lions, IEEE Trans. Microwave Theory Tech.
-
-
Nagatomo, K.1
Daido, Y.2
Shimizu, M.3
Okubo, N.4
-
11
-
-
0026891896
-
-
vol. 40, pp. 1430-1440, July 1992.
-
S. J. Mahon, D. J. Skellern, and F. Green, A technique for modeling 5-parameters for HEMT structures as a function of gate bias, IEEE Trans. Microwave Theory Tech., vol. 40, pp. 1430-1440, July 1992.
-
A Technique for Modeling 5-parameters for HEMT Structures as a Function of Gate Bias, IEEE Trans. Microwave Theory Tech.
-
-
Mahon, S.J.1
Skellern, D.J.2
Green, F.3
-
12
-
-
0027614597
-
-
vol. 41, pp. 1065-1067, June/July 1993.
-
S. J. Mahon, M. J. Chivers, and D. J. Skellern, Simulation of HEMT dc drain current and 1 to 50 GHz 5-parameters as a function of gate bias, IEEE Trans. Microwave Theory Tech., vol. 41, pp. 1065-1067, June/July 1993.
-
Simulation of HEMT Dc Drain Current and 1 to 50 GHz 5-parameters as a Function of Gate Bias, IEEE Trans. Microwave Theory Tech.
-
-
Mahon, S.J.1
Chivers, M.J.2
Skellern, D.J.3
-
13
-
-
0029208072
-
-
vol. 43, pp. 213-216, Jan. 1995.
-
S. J. Mahon and D. J. Skellern, Modeling drain and gate dependence of HEMT 1-50 GHz, small-signal 5-parameters, and dc drain current, IEEE Trans. Microwave Theory Tech., vol. 43, pp. 213-216, Jan. 1995.
-
Modeling Drain and Gate Dependence of HEMT 1-50 GHz, Small-signal 5-parameters, and Dc Drain Current, IEEE Trans. Microwave Theory Tech.
-
-
Mahon, S.J.1
Skellern, D.J.2
-
15
-
-
0027146985
-
-
vol. 41, pp. 159-162, Jan. 1993.
-
A. Eskandarian and S. Weinreb, A note on experimental determination of small-signal equivalent circuit of millimeter-wave FET's, IEEE Trans. Microwave Theory Tech., vol. 41, pp. 159-162, Jan. 1993.
-
A Note on Experimental Determination of Small-signal Equivalent Circuit of Millimeter-wave FET's, IEEE Trans. Microwave Theory Tech.
-
-
Eskandarian, A.1
Weinreb, S.2
-
16
-
-
0029321761
-
-
vol. 43, pp. 1216-1225, June 1995.
-
R. T. Webster, A. J. Slobodnik, and G. A. Roberts, Determination of InP HEMT noise parameters and 5-parameters to 60 GHz, IEEE Trans. Microwave Theory Tech., vol. 43, pp. 1216-1225, June 1995.
-
Determination of InP HEMT Noise Parameters and 5-parameters to 60 GHz, IEEE Trans. Microwave Theory Tech.
-
-
Webster, R.T.1
Slobodnik, A.J.2
Roberts, G.A.3
|