Progress of radical measurements in plasmas for semiconductor processing

Plasma Sources Science and Technology

Volumn 15, Issue 2, 2006, Pages

  Hori, Masaru ^a   Goto, Toshio ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b CHUBU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; DEPOSITION; FLUORESCENCE; INFRARED RADIATION; PLASMA ETCHING; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SURFACE TREATMENT; THIN FILMS; ULTRAVIOLET DEVICES; VACUUM APPLICATIONS;

CAVITY RING DOWN SPECTROSCOPY; INFRARED DIODE LASER ABSORPTION SPECTROSCOPY; LASER INDUCED FLUORESCENCE SPECTROSCOPY; SEMICONDUCTOR PROCESSES;

PLASMA THEORY;

EID: 33646368372     PISSN: 09630252     EISSN: 13616595     Source Type: Journal    
DOI: 10.1088/0963-0252/15/2/S10     Document Type: Conference Paper

References (78)

1. Coburn J W and Chen M 1980 J. Appl. Phys. 51 3134
2. der Gathen V S and Dobele H F 1994 Plasma Chem. Plasma Process. 14 87
3. Takashima S, Hori M, Goto T, Kono A, Ito M and Yoneda K 1999 Appl. Phys. Lett. 75 3929
4. Takashima S, Hori M, Goto T and Yoneda K 2001 J. Appl. Phys. 89 4727
5. Takashima S, Hori M, Goto T, Kono A and Yoneda K 2001 J. Appl. Phys. 90 5497
6. Ito H, Ikeda M, Ito M, Hori M, Takeo T, Hattori H and Goto T 1997 Japan. J. Appl. Phys. 36 L880
7. Den S, Kuno T, Ito M, Hori M, Goto T, O'Keeffe P, Hayashi Y and Sakamoto Y 1997 J. Vac. Sci. Technol. A 15 2880
8. Ito H, Ito M, Hori M, Kono A, Takeo T, Kato T and Goto T 1997 Japan. J. Appl. Phys. 36 L1616
9. Ito H, Teii K, Ishikawa M, Ito M, Hori M, Takeo T, Kato T and Goto T 1999 Japan. J. Appl. Phys. 38 4504
10. Takashima S, Arai S, Hori M, Goto T, Kono A and Yoneda K 2001 J. Vac. Sci. Technol. A 19 599
11. Tada S, Takashima S, Ito M, Hori M and Goto T 2000 J. Appl. Phys. 88 1756
12. Booth J P, Joubert O and Pelletier J 1991 J. Appl. Phys. 69 618
13. Nagai H, Hiramatsu M, Hori M and Goto T 2003 Rev. Sci. Instrum. 74 3453
14. Sasaki K, Kawai Y and Kadota K 1997 Appl. Phys. Lett. 70 1375
15. Shiomi T, Nagai N, Kato K, Hiramatsu M and Nawata M 2001 Diamond Relat. Mater. 10 388
16. Sakakibara M, Hiramatsu M and Goto T 1991 J. Appl. Phys. 69 3467
17. Yamamoto Y, Hori M, Goto T and Hiramatsu M 1996 J. Vac. Sci. Technol. A 14 1999
18. Toyota H, Goto M, Kitagawa K, Hirao T and Sugai H 1995 Japan. J. Appl. Phys. 34 L448
19. Menningen K L, Childs M A, Chevako P, Toyoda H, Anderson L W and Lawler J E 1993 Chem. Phys. Lett. 204 573
20. Booth J P, Cunge G, Neuilly F and Sadeghi N 1998 Plasma Sources Sci. Technol. 7 423
21. Cunge G, Kogelschatz M and Sadeghi N 2004 J. Appl. Phys. 96 4578
22. Tachibana K and Kamisugi H 1999 Appl. Phys. Lett. 74 2390
23. Tachibana K 2001 Proc. Int. Conf. Phenom. Ionized Gases vol 1 3
24. Takeda K, Kubota Y, Matsunami Y and Hori M 2005 Proc. Int. Conf. Phenom. Ionized Gases 08-397
25. Goto T 2001 Adv. At. Mol. Phys. 44 99
26. Itabashi N, Kato K, Nishiwaki N, Goto T, Yamada C and Hirota E 1988 Japan. J. Appl. Phys. 27 L1565
27. Itabashi N, Kato K, Nishiwaki N, Goto T, Yamada C and Hirota E 1989 Japan. J. Appl. Phys. 28 L325
28. Itabashi N, Kato K, Magane M, Naito S, Goto T, Matsuda A, Yamada C and Hirota E 1990 Japan. J. Appl. Phys. 29 L505
29. Yamamoto Y, Nomura H, Tanaka T, Hiramatsu M, Hori M and Goto T 1994 Japan. J. Appl. Phys. 33 4320
30. Maruyama K and Goto T 1995 J. Phys. D: Appl. Phys. 28 884
31. Maruyama K, Ohkouchi K, Ohtsu Y and Goto T 1994 Japan. J. Appl. Phys. 33 4298
32. Takahashi K, Hori M, Maruyama M, Kishimoto S and Goto T 1993 Japan. J. Appl. Phys. 32 L694
33. Miyata K, Hori M and Goto T 1996 J. Vac. Sci. Technol. A 14 2343
34. Wormhoudt J 1990 J. Vac. Sci. Technol. A 8 1722
35. Davies P B and Martineau P M 1990 Appl. Phys. Lett. 57 237
36. Naito S, Ikeda M, Ito N, Hattori T and Goto T 1993 Japan. J. Appl. Phys. 32 5721
37. Bush C, Moller I and Soltwisch H 2001 Plasma Sources Sci. Technol. 10 250
38. Fan W Y, Knewstubb P F, Kaning M, Mechold L, Ropcke J and Davies P B 1999 J. Phys. Chem. A103 4118
39. Ropcke J, Mechold L, Kaning M, Fan W Y and Davies P B 1999 Plasma Chem. Plasma Process. 19 395
40. Mechold L, Ropcke J, Duten X and Rousseau A 1999 Plasma Chem. Plasma Process. 19 395
41. Ropcke J, Revalde G, Osiac M, Lin K and Meichsner J 2002 Plasma Chem. Plasma Process. 22 137
42. Hempel F, Davies P B, Lofhagen D, Mechold L and Ropcke J 2003 Plasma Sources Sci. Technol. 12 S98
43. Lombardi G, Hassouni K, Stancu G D, Ropcke J and Gicquel A 2005 Plasma Sources Sci. Technol. 14 440
44. Lavrov B P, Osiac M, Pipa A V and Ropcke J 2003 Plasma Sources Sci. Technol. 12 576
45. Tachibana K, Shirafuji T and Matsui Y 1992 Japan. J. Appl. Phys. 31 2588
46. Hiramatsu M, Sakakibara M, Mushiga M and Goto T 1991 Meas. Sci. Technol. 2 1017
47. O'Keefe A and Deacon D A G 1988 Rev. Sci. Instrum. 59 2544
48. Boogaarts M G H, Bocker P J, Kessels W M M, Schram D C and van der Sanden M C M 2000 Chem. Phys. Lett. 326 400
49. Engeln R, Helden G V, Berden G and Meijer G 1996 Phys. Lett. 262 105
50. Engeln R and Meijer G 1996 Rev. Sci. Instrum. 67 2708
51. Engeln R, Berden G, Peeters R and Meijer G 1998 Rev. Sci. Instrum. 69 3763
52. Booth J P, Hancock G and Perry N D 1987 Appl. Phys. Lett. 50 318
53. Nomura H, Akimoto K, Kono A and Goto T 1995 J. Phys. D: Appl. Phys. 28 1977
54. Tachibana K, Mukai T, Yuuki A, Matsui Y and Harima H 1990 Japan. J. Appl. Phys. 29 2156
55. Kono A, Koike N, Okuda K and Goto T 1993 Japan. J. Appl. Phys. 32 L543
56. Tachibana K 1994 Japan. J. Appl. Phys. 33 4329
57. Bischel W K, Perry B E and Crosley D R 1981 Chem. Phys. Lett. 82 85
58. Behle St, Georg A, Yuan Y, Engemann J and Brockhaus A 1997 Surf. Coat. Technol. 97 734
59. Hikosaka Y, Nakamura M and Sugai H 1994 Japan. J. Appl. Phys. 33 2157
60. Sugai H and Toyota H 1992 J. Vac. Sci. Technol. A 10 1193
61. Okada T and Maeda M 1989 Rev. Laser Eng. 17 536
62. Stoffel W W, Stoffels E and Tachibana K 1998 Rev. Sci. Instrum. 69 116
63. Teii K, Hori M, Ito M and Goto T 2000 J. Vac. Sci. Technol. A 18 1
64. Nakamura M, Hino K, Sasaki T and Shiokawa Y 2001 J. Vac. Sci. Technol. A 19 1105
65. Berden G, Peeters R and Meijer G 2000 Int. Rev. Phys. Chem. 19 565
66. Lombardi G, Stancu G D, Hempel F, Gicquel A and Ropcke J 2004 Plasma Sources Sci. Technol. 13 27
67. Stancu C D, Ropcke J and Davies P B 2005 J. Chem. Phys. 122 014306
68. Hempel F, Glitsch S, Ropcke J, Sa S and Zimmermann H 2005 Plasma Polymers and Related Materials ed M Mutlu (Ankara: Hacettepe University Press)
69. Miyata K, Takahashi K, Kishimoto S, Hori M and Goto T 1995 Japan. J. Appl. Phys. 34 L444
70. Nomura H, Kono A and Goto T 1994 Japan. J. Appl. Phys. 33 4164
71. Ikeda M, Aiso K, Hori M and Goto T 1995 Japan. J. Appl. Phys. 34 3273
72. Ikeda M, Ito H, Hiramatsu M, Hori M and Goto T 1997 J. Appl. Phys. 82 4055
73. Takahashi K, Hori M and Goto T 1993 Japan. J. Appl. Phys. 32 L1088
74. Miyata K, Hori M and Goto T 1996 J. Vac. Sci. Technol. A 14 2083
75. Takahashi K, Hori M and Goto T 1994 Japan. J. Appl. Phys. 33 4181
76. Hori M 2005 Oyo Buturi 74 at press (in Japanese)
77. Nagai H, Hiramatsu M, Hori M and Goto T 2003 J. Appl. Phys. 94 1362
78. Hori M and Goto T 2002 Appl. Surf. Sci. 192 135