Etching organic low dielectric film in ultrahigh frequency plasma using N2/H2 and N2/NH3 gases

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1362-1367

  Nagai, Hisao ^a   Hiramatsu, Mineo ^a,b   Hori, Masaru ^a   Goto, Toshio ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; AMMONIA; CARRIER CONCENTRATION; ETCHING; HYDROGEN; INDUCTIVELY COUPLED PLASMA; INFRARED SPECTROSCOPY; NITROGEN; PERMITTIVITY; SUBSTRATES;

ETCH RATE;

DIELECTRIC FILMS;

EID: 0042011487     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1588351     Document Type: Article

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