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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 4, 2001, Pages 1105-1110

In situ analysis of perfluoro compounds in semiconductor process exhaust: Use of Li+ ion-attachment mass spectrometry

(5) Nakamura, M a Hino, K a Sasaki, T a Shiokawa, Y a Fujii, T b

a Canon ANELVA Technix Corporation (Japan)

b NATIONAL INSTITUTE FOR ENVIRONMENTAL STUDIES (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; EXHAUST GASES; IN SITU PROCESSING; IONIZATION CHAMBERS; MASS SPECTROMETERS; PLASMA SOURCES; SEMICONDUCTOR DEVICE MANUFACTURE;

ION-ATTACHMENT MASS SPECTROMETRY;

GAS EMISSIONS;

EID: 0035393961 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1376704 Document Type: Article

Times cited : (25)

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