Hafnium-doped tantalum oxide high-k gate dielectrics

Journal of the Electrochemical Society

Volumn 153, Issue 5, 2006, Pages

  Lu, Jiang ^a,b   Kuo, Yue ^a,b   Tewg, Jun Yen ^a  

^a TEXAS A AND M UNIVERSITY   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; DIELECTRIC STRENGTH; LEAKAGE CURRENT DENSITY; PROCESS CONDITIONS;

CURRENT DENSITY; DOPING (ADDITIVES); GATES (TRANSISTOR); HAFNIUM; LEAKAGE CURRENTS; PERMITTIVITY; TANTALUM COMPOUNDS;

DIELECTRIC MATERIALS;

EID: 33645672401     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2180647     Document Type: Article

References (49)

1. International Technology Roadmap for Semiconductors., Semiconductor Industry Association, San Jose, CA (2001).
2. T. Hori, Gate Dielectrics and MOS ULSIs: Principles, Technologies, and Applications, Chap., Springer-Verlag, Inc., New York (1997).
3. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 89, 5234 (2001).
4. M. Houssa, High-k Gate Dielectrics, Chap., Institute of Physics Publishing, Bristol, UK (2004).
5. K. J. Hubbard and D. G. Schlom, J. Mater. Res., 11, 2757 (1996).
6. J. Robertson, J. Vac. Sci. Technol. B, 18, 1785 (2000).
7. B. H. Lee, L. Kang, R. Nieh, W. J. Qi, and J. C. Lee, Appl. Phys. Lett., 76, 1926 (2000).
8. P. J. Spencer, Hafnium: Physico-chemical Properties of its Compound and Alloys., Atomic Energy Review No. 8, P.25, IAEA, Vienna (1981).
9. M. Balog, M. Schieber, M. Michiman, and S. Patai, Thin Solid Films, 41, 247 (1977).
10. W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, and T. P. Ma, IEEE Electron Device Lett., 23, 649 (2002).
11. B. H. Lee, L. Kang, W. J. Qi, R. Nieh, Y. Joen, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet., 1999, 133.
12. R. J. Cava, W. F. Peck, Jr., and J. J. Krajewski, Nature (London), 377, 215 (1995).
13. R. J. Cava, W. F. Peck, Jr., J. J. Krajewski, G. L. Roberts, B. P. Barber, H. M. O'Brian, and P. L. Gammel, Appl. Phys. Lett., 70, 1396 (1997).
14. R. J. Cava and J. J. Krajewski, J. Appl. Phys., 83, 1613 (1998).
15. J.-Y. Tewg, Y. Kuo, J. Lu, and B. Schueler, J. Electrochem. Soc., 151, F59 (2004).
16. K. Kukli, J. Ihanus, M. Ritala, and M. Leskela, Appl. Phys. Lett., 68, 3737 (1996).
17. H. Zhang and R. Solanki, J. Electrochem. Soc., 118, F63 (2001).
18. K. Kukli, J. Ihanus, M. Ritala, and M. Leskela, J. Electrochem. Soc., 144, 300 (1997).
19. J.-Y. Tewg, Y. Kuo, and J. Lu, Electrochem. Solid-State Lett., 8, G27 (2005).
20. T. L. Barr, J. Vac. Sci. Technol. A, 9, 1793 (1991).
21. M. J. Guittet, J. P. Crocombett, and M. Gautier, Phys. Rev. B, 63, 125117 (2001).
22. G. Lucovsky, J. L. Whitten, and Y. Zhang, Solid-State Electron., 46, 1687 (2002).
23. G. Lucovsky, in Proceedings of the International Workshop on Gate Insulator, S. Ohmi, K. Fujita, and, H. S. Momose, Editors, p. 14, Japan Society of Applied Physics, Japan (2001).
24. P. D. Kirsch, C. S. Kang, J. Lozano, J. C. Lee, and J. E. Ekerdt, J. Appl. Phys., 91, 4353 (2002).
25. G. B. Alers, D. J. Werder, Y. Chabal, H. C. Lu, E. P. Gusev, E. Garfunkel, T. Gustafsson, and R. S. Urdahl, Appl. Phys. Lett., 73, 1517 (1998).
26. O. Renault, D. Samour, D. Rouchon, P. Holliger, A.-M. Papon, D. Blin, and S. Marthon, Thin Solid Films, 428, 190 (2003).
27. T. Yamamoto, N. Morita, N. Sugiyama, A. Karen, and K. Okuno, Appl. Surf. Sci., 203-204, 519 (2003).
28. H. Wong, K. L. Ng, N. Zhan, M. C. Poon, and C. W. Kok, J. Vac. Sci. Technol. B, 22, 1094 (2004).
29. W. Nieveen, B. W. Schueler, G. Goodman, P. Schnabel, J. Moskito, I. Mowat, and G. Chao, Appl. Surf. Sci., 231-232, 556 (2004).
30. H. Ono, Y. Hosokawa, T. Ikarashi, K. Shinoda, N. Ikarashi, K. Koyanagi, and H. Yamaguchi, J. Appl. Phys., 89, 995 (2001).
31. R. S. Johnson, J. G. Hong, C. Hinkle, and G. Lucovsky, Solid-State Electron., 46, 1799 (2002).
32. X. Yu, C. Zhu, M. F. Li, A. Chin, A. Y. Du, W. D. Wang, and D.-L. Kwong, Appl. Phys. Lett., 85, 2893 (2004).
33. R. B. Van Dover, D. V. Lang, M. L. Green, and M. Manchanda, J. Vac. Sci. Technol. B, 19, 2779 (2001).
34. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, Chap., John Wiley & Sons, New York (1982).
35. M.-H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, H. J. Choi, S. W. Nam, D.-H. Ko, J. H. Lee, N. I. Lee, and K. Fujihara, Appl. Phys. Lett., 81, 1071 (2002).
36. R. A. B. Devine and A. G. Revesz, J. Appl. Phys., 90, 389 (2001).
37. G. Lucovsky and B. Rayner, Appl. Phys. Lett., 77, 2912 (2000).
38. G. Lucovsky, G. B. Rayner, D. Kang, G. Appel, R. S. Johnson, Y. Zhang, D. E. Sayers, H. Ade, and J. L. Whitten, Appl. Phys. Lett., 79, 1775 (2001).
39. G. Lucovsky, Y. Zhang, G. B. Rayner, G. Appel, H. Ade, and J. L. Whitten, J. Vac. Sci. Technol. B, 20, 1739 (2002).
40. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley & Sons, New York (1981).
41. L. Kang, B. H. Lee, W.-J. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi, and J. C. Lee, IEEE Electron Device Lett., 21, 181 (2000).
42. M. Houssa, V. V. Afanas'ev, A. Stesmans, and M. M. Heyns, Appl. Phys. Lett., 77, 1885 (2000).
43. C. Chaneliere, J. L. Autran, R. A. B. Devine, and B. Balland, Mater. Sci. Eng., R., 22, 269 (1998).
44. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd Ed., Chap., John Wiley & Sons, New York (1998).
45. R. Nieh, R. Choi, S. Gopalan, K. Onishi, C. S. Kang, H.-J. Cho, S. Krishnan, and J. C. Lee, Appl. Phys. Lett., 81, 1663 (2002).
46. K. Lehovec, Solid-State Electron., 11, 135 (1968).
47. K.-J. Choi, W.-C. Shin, and S.-G. Yoon, J. Electrochem. Soc., 149, Fl8 (2002).
48. M. A. Green, F. D. King, and J. Shewchun, Solid-State Electron., 17, 551 (1974).
49. A. Ghetti, C. Liu, M. Mastrapasqua, and E. Sangiorgi, Solid-State Electron., 44, 1523 (2000).