Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1799-1805

  Johnson, R S ^a   Hong, J G ^a   Hinkle, C ^a   Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON TRAPS; HAFNIUM COMPOUNDS; NONCRYSTALLINE SOLIDS; SEMICONDUCTING SILICON; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

GATE DIELECTRICS;

GATES (TRANSISTOR);

EID: 0036839340     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00152-1     Document Type: Conference Paper

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