Analysis of high-k HfO 2 and HfSiO 4 dielectric films

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 556-560

  Nieveen, W ^a   Schueler, B W ^b   Goodman, G ^a   Schnabel, P ^a   Moskito, J ^a   Mowat, I ^a   Chao, G ^a  

^a CHARLES EVANS AND ASSOCIATES   (United States)

^b ReVera Inc   (United States)

Author keywords

Backside profile; Depth profile; Gate dielectric; HfO 2; SIMS; XPS

Indexed keywords

COMPOSITION; DIELECTRIC FILMS; ION BEAMS; ION BOMBARDMENT; PERMITTIVITY; SECONDARY ION MASS SPECTROMETRY; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

BACKSIDE PROFILE; DEPTH PROFILE; GATE DIELECTRIC; HFO2;

HAFNIUM COMPOUNDS;

EID: 2942534267     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.090     Document Type: Conference Paper

References (3)

1. De Witte H., Conard T., Vandervorst W., Gijbels R. Appl. Surf. Sci. 523:2003;203.
2. y , Denver, 2002.
3. 2 /Si stacks: influence of sputtering condition of profile shape, this proceedings.