Comparison of electrical and reliability performances of Ti B 2 -, Cr B 2 -, and W 2 B 5 -based Ohmic contacts on n-GaN

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 744-749

  Khanna, Rohit ^a   Pearton, S J ^a   Ren, F ^a   Kravchenko, I I ^b  

^a University of Florida   (United States)

^b NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; METAL BORIDES; TIALBORIDETIAU;

BORIDES; ELECTRIC PROPERTIES; ELECTRON TUNNELING; MORPHOLOGY; SEMICONDUCTING GALLIUM COMPOUNDS; TITANIUM COMPOUNDS;

OHMIC CONTACTS;

EID: 33645532230     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2181578     Document Type: Article

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