Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

IEEE Transactions on Electron Devices

Volumn 52, Issue 10, 2005, Pages 2124-2128

  Nakazawa, Satoshi ^b   Ueda, Tetsuzo ^a,b   Inoue, Kaoru ^a,b   Tanaka, Tsuyoshi ^a,b   Ishikawa, Hiroyasu ^c   Egawa, Takashi ^a,c  

^a IEEE

^b PANASONIC CORPORATION   (Japan)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AlGaN GaN heterojunction field effect transistor (HFET); Polarization; Quaternary alloy; Recessed gate structure; Source resistance

Indexed keywords

ENERGY GAP; EPITAXIAL LAYERS; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; POLARIZATION;

QUATERNARY ALLOY CAPPING LAYERS; RECESSED-GATE STRUCTURE; SOURCE RESISTANCE; TOTAL POLARIZATION;

FIELD EFFECT TRANSISTORS;

EID: 33645510125     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.856175     Document Type: Article

References (23)

1. K. Joshin, T. Kikkawa, H. Hayashi, T. Maniwa, S. Yokokawa, M. Yokoyama, N. Adachi, and M. Takikawa, "A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications," in IEDM Tech. Dig., 2003, pp. 983-985.
2. R. Quay, A. Tessmann, R. Kiefer, R. Weber, F. van Raay, M. Kuri, M. Riessle, H. Massler, S. Müller, M. Shlechtweg, and G. Weinmann, "AlGaN/GaN HEMTs on SiC: toward power operation at V-band," in IEDM Tech. Dig., 2003, pp. 567-570.
3. T. Hussain, A. Kurdoghlian, P. Hashimoto, W.-S. Wong, M. Wetzel, J.-S. Moon, L. McCray, and M. Micovic, "GaN HFETs with excellent low noise performance at low power levels through the use of thin AlGaN Schottky barrier Iayer," in IEDM Tech. Dig., 2001, pp. 581-584.
4. Y. Hirose, Y. Ikeda, M. Ishii, T. Murata, K. Inoue, T. Tanaka, H. Ishikawa, T. Egawa, and T. Jimbo, "Low noise and low distortion performances of an AlGaN/GaN HFET," IEICE Trans. Electron., vol. E86-C, pp. 2058-2064, 2003.
5. H. Ishida, Y. Hirose, T. Murata, A. Kanda, Y. Ikeda, T. Matsuno, K. Inoue, Y. Uemoto, T. Tanaka, and D. Ueda, "A high power Tx/Rx switch IC using AIGaN/GaN HFETs," in IEDM Tech. Dig., 2003, pp. 583-586.
6. C. H. Chen, S. Keller, G. Parish, R. Ventury, P. Kozodoy, and Y. Wu, "High-transconductance self-aligned AIGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts," Appl. Phys. Lett., vol. 73, pp. 3147-3149, Nov. 1998.
7. D. Qiao, Z. F. Guan, J. Carlton, S. S. Lau, and G. J. Sullivan, "Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the "advancing" Al/Ti metallization," Appl. Phys. Lett., vol. 74, pp. 2652-2654, May 1999.
8. max of 107 GHz," IEEE Electron Device Lett., vol. 20, no. 7, pp. 323-325, Jul. 1999.
9. K. O. Schweitz, P. K. Wang, S. E. Mohney, and D. Gotthold, "V/Al/Pt/Au ohmic contact to n-AlGaN/GaN heterostructures," Appl. Phys. Lett., vol. 80, pp. 1954-1956, Mar. 2002.
10. M. Kanamura, T. Kikkawa, N. Adachi, T. Kimura, S. Yokogawa, M. Nagahara, N. Hara, and K. Joshin, "AlGaN/GaN power HEMTs using surface-charge- controlled structure with recessed ohmic technique," in Proc. Int. Conf. SSDM, 2003, pp. 916-917.
11. H. P. Maruska and J. J. Tietjen, "The preparation and properties of vapor-deposited single-crystalline GaN," Appl. Phys. Lett., vol. 15, pp. 327-329, 1969.
12. 3 heterostructure and determination of the intrinsic lattice constants of GaN free form the strain," Jpn. J. Appl. Phys., vol. 31, pp. L1454-L1456, 1992.
13. G. A. Jeffrey and G. S. Parry, "Crystal structure of aluminum nitride," J. Chem. Phys., vol. 23, p. 406, 1955.
14. H. Schulz and K. H. Thiemann, "Crystal structure refinement of AIN and GaN," Solid State Commun., vol. 23, pp. 815-819, 1977.
15. I. C. Huseby, "Synthesis and characterization of a high-purity aluminum nitride powder," J. Amer. Ceram. Soc., vol. 66, pp. 217-220, 1983.
16. T. L. Tansley and C. P. Foley, "Optical bandgap of indium nitride," J. Appl Phys., vol. 59, pp. 3241-3247, 1986.
17. R. B. Zetterstrom, "Synthesis and growth of single crystals of gallium nitride," J. Mater. Sci., vol. 5, p. 1102, 1970.
18. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, and L. F. Eastman, "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures," J. Appl. Phys., vol. 87, pp. 334-344, 2000.
19. J.I. Pankove, H. P. Maruska, and J. E. Berkeyheiser, "Optical absorption of GaN,"Appl. Phys. Lett., vol. 17, pp. 197-199, 1970.
20. W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, "Epitaxially grown AIN and its optical band gap," J. Appl. Phys., vol. 44, pp. 292-296, 1973.
21. V. Y. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, "Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap," Phys. Stat. Sol. (b), vol. 229, pp. r1-r3, 2002.
22. H. Masato, Y. Ikeda, T. Matsuno, K. Inoue, and K. Nishii, "Novel high breakdown voltage AlGaN/GaN HFETs using selective thermal oxidation process," in IEDM Tech. Dig., 2000, pp. 377-380.
23. M. D. Feuer, "Two-layer model for source resistance in selectively doped heterojunction transistors," IEEE Trans. Electron Devices, vol. ED-32, no. 1, pp. 7-11, Jan. 1985.