Gettering in silicon photovoltaics: Current state and future perspectives

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 4, 2006, Pages 696-713

  Seibt, M ^a   Sattler, A ^a,b   Rudolf, C ^a   Voss O ^a,c   Kveder, V ^a   Schroter W ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b SILTRONIC AG   (Germany)

^c INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING SCHEMES; METAL SPECIES; SILICON PHOTOVOLTAICS; THERMAL BUDGET;

ANNEALING; HIGH TEMPERATURE EFFECTS; PRECIPITATION (CHEMICAL); SILICON; THERMAL EFFECTS;

PHOTOVOLTAIC EFFECTS;

EID: 33645368310     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200664516     Document Type: Conference Paper

References (55)

1. A. A. Istratov, T. Buonassisi, R. J. McDonald, A. R. Smith, R. Schindler, J. A. Rand, J. P. Kalejs, and E. R. Weber, J. Appl. Phys. 94, 6552 (2003).
2. T. Y. Tan, E. E. Gardner, and W. K. Tice, Appl. Phys. Lett. 30, 175 (1977).
3. S. M. Myers, M. Seibt, and W. Schröter, J. Appl. Phys. 88, 3795 (2000).
4. W. Schröter, M. Seibt, and D. Gilles, in: Handbook of Semiconductors Vol. 1, edited by W. Schröter and K. Jackson (Wiley-VCH, Weinheim, 2000), p. 597.
5. W. Schröter, V. Kveder, M. Seibt, A. Sattler, and E. Spiecker, Sol. Energy Mater. Sol. Cells 2002, 299 (2002).
6. P. S. Plekhanov, R. Gafiteanu, U. M.Gösele, and T. Y. Tan, J. Appl. Phys. 86, 2453 (1999).
7. P. S. Plekhanov, M. D. Ngoita, and T. Y. Tan, J. Appl. Phys. 90, 5388 (2001).
8. W. Schröter, A. Döller, A. Zozime, V. Kveder, M. Seibt, and E. Spiecker, Solid State Phenom. 95/96, 527 (2004).
9. M. Seibt, V. Kveder, W. Schröter, and O. Voss, phys. stat. sol. (a) 202, 911 (2005).
10. V. Kveder, M. Kittler, and W. Schröter, Phys. Rev. B 63, 115206 (2001).
11. M. Apel, I. Hanke, R. Schindler, and W. Schröter, J. Appl. Phys. 76, 4433 (1994).
12. A. Sattler, PhD Thesis, Göttingen 2003 (Cuvillier, Göttingen 2002, ISBN 3-89873-856-6).
13. A. Sattler, M. Seibt, V. Kveder, and W. Schröter, Solid State Phenom. 95/96, 553 (2004).
14. D. Gilles, W. Schröter, and W. Bergholz, Phys. Rev. B 41, 5770 (1990).
15. R. N. Hall and H. Racette, J. Appl. Phys. 35, 379 (1964).
16. L. Baldi, G. F. Cerofolini, G. Ferlsy, and G. Frigerio, phys. stat. sol. (a) 48, 523 (1978).
17. S. F. Cagnina, J. Electrochem. Soc. 116, 498 (1969).
18. T. A. O'Shaughnessy, H. D. Barber, D. A. Thompson, and E. L. Heasell, J. Electrochem. Soc. 121, 1350 (1974).
19. A. A. Istratov, P. Zhang, R. J. McDonald, A. R. Smith, M. Seacrist, J. Moreland, J. Shen, R. Wahlich, and E. R. Weber, J. Appl. Phys. 97, 023505 (2005).
20. E. Spiecker, M. Seibt, and W. Schröter, Phys. Rev. B 55, 9577 (1997).
21. F. F. Morehead and R. F. Lever, Appl. Phys. Lett. 48, 151 (1986).
22. B. J. Mulvaney and W. B. Richardson, Appl. Phys. Lett. 51, 1439 (1987).
23. M. Orlowski, Appl. Phys. Lett. 53, 1323 (1988).
24. E.Ö. Sveinbjörnsson, O. Engström, and U. Södervall, J. Appl. Phys. 73, 7311 (1993).
25. V. Kveder, W. Schröter, A. Sattler, and M. Seibt, Mater. Sci. Eng. B 71, 175 (2000).
26. A. Ourmazd and W. Schröter, Appl. Phys. Lett. 45, 781 (1984).
27. A. Ourmazd and W. Schröter, Mater. Res. Soc. Symp. Proc. 36, 25 (1985).
28. A. Correia, B. Pichaud, A. Lhorte, and J. B. Quiorin, J. Appl. Phys. 79, 2145 (1996).
29. M. Seibt, A. Döller, V. Kveder, A. Sattler, and A. Zozime, phys. stat. sol. (b) 222, 327 (2000).
30. S. Solmi and D. Nobili, J. Appl. Phys. 83, 2484 (1998).
31. J. Xie and S. P. Chen, Phys. Rev. Lett. 83, 1795 (1999).
32. A. Bourret and W. Schröter, Ultramicroscopy 14, 97 (1984).
33. J. Utzig, J. Appl. Phys. 64, 3629 (1986).
34. R. Kühnapfel and W. Schröter, Mater. Sci. Forum 10-12, 151 (1986).
35. For a compilation of data, see: W. Schröter and M. Seibt, in: Properties of Crystalline Silicon, edited by R. Hull (The Institute of Electrical Engineering, London, 1999), p. 543.
36. W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).
37. R. N. Hall, Phys. Rev. 87, 387 (1952).
38. T. Buonassisi, A. A. Istratov, M. A. Marcus, M. Heuer, M. D. Pickett, B. Lai, Z. Cai, S. M. Heald, and E. R. Weber, Solid State Phenom. 108/109, 577 (2005).
39. W. Bergholz, Physica B 116, 312 (1983).
40. It should be noted that the temperature has been measured during heating the sample and that gettering processes in this period have been included in the simulations.
41. E. R. Weber, Appl. Phys. A 30, 1 (1983).
42. M. Seibt and W. Schröter, Philos. Mag. A 59, 337 (1989).
43. The binary system Si: Au is, similar to Si:Al, a simple eutectic system with a eutectic temperature of 363°C. Radiotracer experiments have shown that the gettering effect of the Au : Si liquid is even stronger compared to that of Al : Si. In addition, unlike the Al : Si liquids, it is stable even for very long processing times [12, 13].
44. T. Buonassisi, A. A. Istratov, M. Heuer, M. A. Marcus, R. Jonczyk, J. Isenberg, B. Lai, Z. Cai, S. Heald, W. Warta, R. Schindler, G. Willeke, and E. R. Weber, J. Appl. Phys. 97, 074901 (2005).
45. W. Schröter and H. Cerva, Solid State Phenom. 85/86, 67 (2002).
46. N. A. Drozdov, A. A. Patrin, and V. D. Tkachev, Sov. Phys. JETP Lett. 23, 597 (1976).
47. V. Kveder, M. Badelevych, E. Steinman, A. Izotov, W. Schröter, and M. Seibt, Appl. Phys. Lett. 84, 2106 (2004).
48. V. Kveder, M. Badylevich, W. Schröter, M. Seibt, E. Steinman, and A. Izotov, phys. stat. sol. (a) 202, 901-910 (2005).
49. W. Schröter, J. Kronewitz, U. Gnauert, F. Riedel, and M. Seibt, Phys. Rev. B 52, 13726 (1995).
50. O. Voss, V. V. Kveder, W. Schröter, and M. Seibt, phys. stat. sol. (c) 2, 1847 (2005).
51. O. Voss, V. V. Kveder, and M. Seibt, unpublished results.
52. T. Buonassisi, A. A. Istratov, S. Peters, C. Ballif, J. Isenberg, S. Riepe, W. Warta, R. Schindler, G. Willeke, Z. Cai, B. Lai, and E. R. Weber, Appl. Phys. Lett. 87, 121918 (2005).
53. M. Seibt, M. Apel, I. Hanke, and W. Schröter, in: Proceedings of 6th Workshop on the Role of Impurities and Defects in Silicon Device Processing, Snowmass, CO, 11-14 August 1996, p. 118 (NREL/SP-413-21551).
54. I. Hanke, PhD Thesis, Göttingen 1997 (Cuvillier, Göttingen 1997, ISBN 3-89588-635-1).
55. S. M. Sze, Physics of Semiconductor Devices (Wiley Interscience, New York, 1981).