Structural and electrical properties of metal impurities at dislocations in silicon

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 911-920

  Seibt, M ^a   Kveder, V ^a,b   Schroter W ^a   Voss O ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION CORE; ELECTRICAL PROPERTIES; METAL IMPURITIES;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; GROWTH KINETICS; IMPURITIES; METALS; PRECIPITATION (CHEMICAL); STRAIN MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 25444486965     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460515     Document Type: Conference Paper

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