Phosphorous-diffusion gettering in the presence of a nonequilibrium concentrationof silicon interstitials: A quantitative model

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 15, 1997, Pages 9577-9583

  Spiecker, E ^a   Seibt, M ^a   Schroter W ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000456505     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.9577     Document Type: Article

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