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Physical Review Letters

Volumn 83, Issue 9, 1999, Pages 1795-1798

Diffusion and clustering in heavily arsenic-doped silicon: Discrepancies and explanation

(2) Xie, Jianjun a Chen, S P a

a LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243706867 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.83.1795 Document Type: Article

Times cited : (63)

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