Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 527-538

  Schroter W ^a   Doller A ^a   Zozime, A ^b   Kveder, V ^c   Seibt, M ^a   Spiecker, E ^d  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITÉ D EVRY VAL D ESSONNE   (France)

^c INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^d UNIVERSITY OF KIEL   (Germany)

Author keywords

Gettering; Metallic Impurities; Phosphorus Diffusion Gettering; Self Interstitials; Silicides; Silicon

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); ENTROPY; FERMI LEVEL; FUSED SILICA; MOSSBAUER SPECTROSCOPY; PHOSPHORUS; PHOTOVOLTAIC EFFECTS; PRECIPITATION (CHEMICAL); REACTION KINETICS; SEGREGATION (METALLOGRAPHY); SILICON WAFERS; SOLUBILITY;

GETTERING; METALLIC IMPURITIES; SELF-INTERSTITIALS;

CRYSTAL IMPURITIES;

EID: 1642560892     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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