Simulation of Al and phosphorus diffusion gettering in Si

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 175-181

  Kveder, V ^a,b   Schroter W ^a   Sattler, A ^a   Seibt, M ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; FERMI LEVEL; PHOSPHORUS; SEMICONDUCTING ALUMINUM COMPOUNDS; SOLUBILITY;

DIFFUSION GETTERING;

SEMICONDUCTING SILICON;

EID: 0342758697     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00370-0     Document Type: Article

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