Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 553-558

  Sattler, A ^a,b   Seibt, M ^a   Kveder, V ^a,b   Schroter W ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

AuG; Cobalt; Gettering; Oxygen; Precipitation; Segregation; Silicon

Indexed keywords

COBALT; CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; DISSOLUTION; GOLD COMPOUNDS; IN SITU PROCESSING; OXYGEN; PRECIPITATION (CHEMICAL); RADIOGRAPHY; SEGREGATION (METALLOGRAPHY); SILICON; THERMAL EFFECTS;

AUTORADIOGRAPHY; GETTERING STRATEGIES; INTERSTITIALS;

CRYSTAL IMPURITIES;

EID: 1642515934     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (7)

1. G. Hahn, PhD thesis, Universität Konstanz, 1999.
2. I. Perichaud, F. Floret, and S. Martinuzzi, Proc. der 23. IEEE PVSC, Louisville (1993), p. 243.
3. K. Abdurakhmanov, K. Daliev, G. Kulikov, A. Lebedev, S. Utamuradova, and S. Yusupova, Semiconductors 27 (1993), p. 674.
4. S. Myers, M. Seibt, and W. Schröter, J. Appl. Phys. 88 (2000), p. 3795.
5. M. Apel, I. Hanke, R. Schindler, and W. Schröter, J. Appl. Phys. 76 (1994), p. 4432.
6. M. Apel, PhD thesis, Universität Göttingen, 1996.
7. J. Utzig and D. Gilles, Materials Science Forum 38 (1989), p. 729.