Deposition of high-k ZrO 2 films on strained SiGe layers using microwave plasma

Electronics Letters

Volumn 37, Issue 6, 2001, Pages 390-392

  Chatterjee, S ^a   Samanta, S K ^a   Banerjee, H D ^a   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE PLASMA; ZIRCONIUM TETRATERT BUTOXIDE;

ELECTRIC PROPERTIES; LOW TEMPERATURE EFFECTS; MICROWAVES; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; ZIRCONIA;

DIELECTRIC MATERIALS;

EID: 0035868065     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010253     Document Type: Article

References (8)

1. Strained silicon heterostructures: Materials and devices
2. 2 gate dielectric deposited directly on Si
3. 2 gate dielectric on SiGe
4. x films grown using gas source molecular beam epitaxy
5. 2 film growth by chemical vapor deposition using zirconium tetra-tert-butoxide
6. 2 films from organometallic compounds
7. 2 gate dielectric stacks
8. A single frequency approximation for interface-state density determination