The in compositional gradation effect on photoluminescence in InGaN/GaN multi-quantum-well structures

Journal of Physics Condensed Matter

Volumn 18, Issue 11, 2006, Pages 3127-3140

  Kim, Keunjoo ^a   Kim, Chang Soo ^b   Lee, Jeong Yong ^c  

^a Chonbuk National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; QUENCHING; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

MULTI-QUANTUM-WELL STRUCTURE; NANO-CLUSTERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33644782833     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/11/018     Document Type: Article

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