Time-resolved photoluminescence investigations of cubic GaN layers and crystals up to room temperature

Applied Physics Letters

Volumn 70, Issue 14, 1997, Pages 1808-1810

  Klann, R ^a,b   Brandt, O ^a   Yang, H ^a,c   Grahn, H T ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b CompuNet GmbH ^*  (Germany)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SURFACE ROUGHNESS; X RAY DIFFRACTION;

DECAY TIME; EXCITATION DENSITY; GALLIUM NITRIDE LAYERS; NONRADIATIVE RECOMBINATION CHANNELS; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031557619     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118698     Document Type: Article

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