Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AIN buffer layer on (111) Si

Applied Physics Letters

Volumn 69, Issue 14, 1996, Pages 2089-2091

  Godlewski, M ^a   Bergman, J P ^b   Monemar, B ^b   Rossner, U ^c   Barski, A ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b LINKÖPING UNIVERSITY   (Sweden)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001688528     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116889     Document Type: Article

References (18)

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