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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 24, 2001, Pages 2453391-2453397

Time-resolved photoluminescence of InxGa1-xN/GaN multiple quantum well structures: Effect of Si doping in the barriers

(9) Choi, C K a Kwon, Y H a Little, B D a Gainer, G H a Song, J J a Chang, Y C a Keller, S a Mishra, U K a DenBaars, S P a

a OKLAHOMA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; DENSITY; ELECTRIC FIELD; LUMINESCENCE; PIEZOELECTRICITY; QUANTUM MECHANICS; STRUCTURE ANALYSIS; X RAY DIFFRACTION;

EID: 0000393584 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (65)

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