Lifetime enhancement of the exciton in a trapezoidal-type InGaN/GaN multi-quantum well structure

Thin Solid Films

Volumn 478, Issue 1-2, 2005, Pages 286-292

  Kim, Keunjoo ^a   Lee, Jeong Yong ^b   Jeoung, Sae Chae ^c  

^a Chonbuk National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Chemical vapor deposition (CVD); Luminescence; Nanostructures; Transmission electron microscopy (TEM)

Indexed keywords

ELECTRONIC STRUCTURE; EXCITONS; GALLIUM NITRIDE; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; OSCILLATORS (ELECTRONIC); PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

HYBRID VAPOR PHASE EPITAXY (HVPE); LIFETIME ENHANCEMENT; QUANTUM WELL STRUCTURES; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);

SEMICONDUCTOR QUANTUM WELLS;

EID: 14544279384     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.189     Document Type: Article

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