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Volumn 72, Issue 9, 1998, Pages 1066-1068

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001338776     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120966     Document Type: Article
Times cited : (94)

References (11)
  • 5
    • 22244445665 scopus 로고    scopus 로고
    • unpublished
    • D. Cohen (unpublished).
    • Cohen, D.1
  • 6
    • 22244444016 scopus 로고    scopus 로고
    • exc=3.26eV, where carriers are excited only in the quantum well region. A similar dependence of the lifetime on quantum well number was observed
    • exc=3.26eV, where carriers are excited only in the quantum well region. A similar dependence of the lifetime on quantum well number was observed.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.