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Journal of Physics Condensed Matter

Volumn 14, Issue 13, 2002, Pages 3445-3455

Phonon emission by photoexcited carriers in InGaN/GaN multiple quantum wells

(6) Akimov, A V a Cavill, S A a Kent, A J a Stanton, N M a Wang, T b Sakai, S b

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

b UNIVERSITY OF TOKUSHIMA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HOT CARRIERS; LIGHT EMITTING DIODES; PHONONS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

CARRIER RELAXATION; INDIUM GALLIUM NITRIDE; NON-RADIATIVE RECOMBINATION PROCESSES; PHONON EMISSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037041141 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/14/13/304 Document Type: Article

Times cited : (5)

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