Time-resolved photoluminescence studies of InGaN epilayers

Applied Physics Letters

Volumn 69, Issue 19, 1996, Pages 2837-2839

  Smith, M ^b   Chen, G D ^a,b   Lin, J Y ^b   Jiang, H X ^b   Asif Khan, M ^c   Chen, Q ^c  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b KANSAS STATE UNIVERSITY   (United States)

^c APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001565858     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117335     Document Type: Article

References (12)

1. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
2. M. Asif Khan, M. S. Shur, J. N. Kuznia, Q. Chen, J. Burn, and W. Schaff, Appl. Phys. Lett. 66, 1083 (1995).
3. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys. 34, L797 (1995).
4. S. Nakamura et al., Appl. Phys. Lett. 68, 2105 (1996).
5. M. Asif Khan, S. Krishnankutty, R. A. Skogman, J. N. Kuznia, D. T. Olson, and T. George, Appl. Phys. Lett. 65, 520 (1994).
6. G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, Appl. Phys. Lett. 67, 1563 (1995); M. Smith et al., J. Appl. Phys. 79, 7001 (1996).
7. G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, Appl. Phys. Lett. 67, 1563 (1995); M. Smith et al., J. Appl. Phys. 79, 7001 (1996).
8. S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys. 1 32, L16 (1993); S. Nakamura, N. Iwasa, and S. Nagahama, ibid. 32, L338 (1993).
9. S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys. 1 32, L16 (1993); S. Nakamura, N. Iwasa, and S. Nagahama, ibid. 32, L338 (1993).
10. C. I. Harris, B. Monemar, H. Amano, and I. Akasaki, Appl. Phys. Lett. 67, 840 (1995).
11. J. Feldmann, G. Peter, E. O. Gobel, P. Dawson, K. Moore, C. Foxon, and R. J. Elliott, Phys. Rev. Lett. 59, 2337 (1987).
12. H. X. Jiang, L. Q. Zu, and J. Y. Lin, Phys. Rev. B 42, 7284 (1990).