Experimental study of carrier velocity overshoot in sub-0.1 µm devices - Physical limitation of MOS structures -

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 109-112

  Mizuno, Tomohisa ^a   Ohba, Ryuji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOS DEVICES; MOSFET DEVICES; VELOCITY; CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); PHONONS; SCATTERING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SURFACE ROUGHNESS;

BULK MOSFETS; CARRIER VELOCITY; CONDITION; LOW CARRIER DENSITY; MOS STRUCTURE; PHYSICAL LIMITATIONS; PHYSICAL MECHANISM; SOI-MOSFETS; TRANSVERSE FIELD; VELOCITY OVERSHOOT;

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES;

CARRIER VELOCITY OVERSHOOT; CURRENT DRIVABILITY;

EID: 0030383850     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553133     Document Type: Conference Paper

References (8)

1. [l]T.Mizumo et al., Appl. Phys. Lett., 69, 106 (1996).
2. R.Ohba et al., in Extended Ahst. SSDM,p.491 (1990).
3. M.Iwase et al., BEE Qectron Device Lett., EDL-14, 51 (1993).
4. K.Ohuchi et al., Jpn.J.Appl.Phys., 35, 960 (1996).
5. S.Takagi el al., EEE ?kans. Electron Devices, ED-42,2125 (1995).
6. S.Takagi et al., in IEDM Tech. Dig., p.711 (1992)
7. L.T.Su et al., in IEDM Tech. Dig., p.649 (1994).
8. K.Natori, Jpn.J.Appl.Phys., 33,554 (1994).