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Volumn 18, Issue 9, 1997, Pages 417-419

Thin oxides with in situ native oxide removal

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDATION; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0031236704     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.622515     Document Type: Article
Times cited : (36)

References (16)
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  • 10
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    • High quality epitaxial Si grown by a simple low-pressure chemical vapor deposition at 550 degress C
    • A. Chin, B. C. Lin, and W. J. Chen, "High quality epitaxial Si grown by a simple low-pressure chemical vapor deposition at 550 degress C," Appl. Phys. Lett., vol. 69, no. 11, pp. 1617-1620, 1996.
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    • M.-S. Liang, J. Y. Choi, P.-K. Ko, and C. Hu, "Inversion-layer capacitance and mobility of very thin gate-oxide MOSFET's," IEEE Trans. Electron Devices, vol. ED-33, pp. 409-413, Mar. 1986.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.