Field-enhanced Si-Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 1101-1103

  McPherson, J W ^a   Reddy, V K ^a   Mogul, H C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000168264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119739     Document Type: Article

References (14)

1. J. W. McPherson and D. A. Baglee, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1985), p. 1.
2. J. W. McPherson and D. A. Baglee, J. Electrochem. Soc. 132, 1903 (1985).
3. J. W. McPherson. International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1986), p. 12.
4. I. C. Chen, S. Holland, and C. Hu, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1985), p. 24.
5. J. Lee, I. C. Chen, and C. Hu, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1988), p. 131.
6. K. C. Boyko and D. L. Gerlach, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1989), p. 7.
7. J. Suehle, P. Chaparala, C. Messick, W. Miller, and K. Boyko, International Reliability Phvsics Proceedings (IEEE, Piscataway, NJ, 1994), p. 120.
8. P. Charparala, J. Suehle, C. Messick, and M. Roush, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1996), p. 61.
9. M. Kimura, International Reliability Physics Proceedings (IEEE, Piscataway, NJ, 1997), p. 190.
10. C. Helms and E. Poindexter, Rep. Prog. Phys. 57, 791 (1994).
11. J. Conley, Jr., P. Lenahan, and B. Wallace, IEEE International Integrated Reliability Workshop (IEEE, Piscataway, NJ, 1996), p. 134.
12. C. Kittel, Introduction to Solid State Physics, 4th ed. (Wiley, New York, 1971), p. 457.
13. C. Kittel, p. 459.
14. K. Rails, T. Courtney, and J. Wulff, Introduction to Materials Science and Engineering (Wiley, New York, 1976), p. 38.