Residual order within thermally grown amorphous SiO2 on crystalline silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 8, 2004, Pages

  Tatsumura, K ^a   Watanabe, T ^a,b   Yamasaki, D ^a   Shimura, T ^c   Umeno, M ^c   Ohdomari, I ^a  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON; SILICON DIOXIDE;

ARTICLE; ATOM; CRYSTAL STRUCTURE; ELECTRONICS; OXIDATION; X RAY DIFFRACTION;

EID: 3342946005     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.085212     Document Type: Article

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