Improved in0.45Al0.55As/In0.45Ga 0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 8, 2005, Pages 5903-5908

  Chen, Yeong Jia ^a   Lee, Ching Sung ^b   Wang, Tzong Bin ^a   Hsu, Wei Chou ^a   Chen, Yen Wei ^a   Su, Ke Hua ^a   Wu, Chang Luen ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c Transcom Inc   (Taiwan)

Author keywords

Inverse composite channel; Metamorphic; MHEMT; Temperature dependent characteristics

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRON MOBILITY; MICROWAVES; TRANSCONDUCTANCE;

INVERSE COMPOSITE CHANNEL; METAMORPHIC; MHEMT;

TRANSISTORS;

EID: 31544478817     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.5903     Document Type: Article

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