Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 A, 1999, Pages

  Chang, Wen Lung ^a   Pan, Hsi Jen ^a   Wang, Wei Chou ^a   Thei, Kong Beng ^a   Cheng, Shiou Ying ^b   Lour, Wen Shiung ^c   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TRANSCONDUCTANCE;

PSEUDOMORPHIC TRANSISTORS;

TRANSISTORS;

EID: 0033325556     PISSN: 00214922     EISSN: None     Source Type: None    
DOI: 10.1143/jjap.38.l1385     Document Type: Article

References (15)