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Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 641-645

Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1-xP graded buffer layers

(4) Yuan, K a Radhakrishnan, K a Zheng, H Q a Yoon, S F a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; ELECTRON TRAPS; MOLECULAR BEAM EPITAXY; PHOTOSENSITIVITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSCONDUCTANCE;

KINK EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035575117 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/S1369-8001(02)00034-3 Document Type: Conference Paper

Times cited : (14)

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