|
Volumn , Issue , 2002, Pages 201-204
|
Low noise characteristics of double-doped In0.52Al0.48As/In0.53Ga0.47As power metamorphic HEMT on GaAs substrate with wide head T-shaped gate
a a a a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ELECTRIC RESISTANCE;
GATES (TRANSISTOR);
MICROWAVES;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
SPURIOUS SIGNAL NOISE;
SUBSTRATES;
THRESHOLD VOLTAGE;
TRANSCONDUCTANCE;
GATE RESISTANCE;
HIGH ELECTRON MOBILITY TRANSISTORS;
|
EID: 0036045406
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (17)
|
References (8)
|