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Volumn , Issue , 2002, Pages 201-204

Low noise characteristics of double-doped In0.52Al0.48As/In0.53Ga0.47As power metamorphic HEMT on GaAs substrate with wide head T-shaped gate

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; GATES (TRANSISTOR); MICROWAVES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; SUBSTRATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

EID: 0036045406     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (17)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.