High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-In GaAs substrates

IEEE Electron Device Letters

Volumn 24, Issue 3, 2003, Pages 135-137

  Dumka, D C ^a   Tserng, H Q ^a   Kao, M Y ^a   Beam III, E A ^a   Saunier, P ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Enhancement; GaAs; HEMT; InAlAs InGaAs; Metamorphic

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TEMPERATURE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN CURRENT; INDIUM ALUMINUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037938626     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.809048     Document Type: Letter

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