Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1037-1044

  Boudrissa, Mustafa ^a   Delos, Mustafa ^a   Gaquiere, C ^a   Rousseau, Michel ^a   Cordiere, Yvon ^a   Theron, Didier ^a   De Jaeger, Jean Claude ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Breakdown; High electron mobility transistor (HEMT); Impact ionization; Metamorphic (MM)

Indexed keywords

ALUMINUM ALLOYS; ELECTRIC BREAKDOWN; ELECTRIC CURRENT CONTROL; ELECTRIC FIELDS; ENERGY GAP; HYDRODYNAMICS; IMPACT IONIZATION; OPTIMIZATION; TRANSCONDUCTANCE;

ENHANCEMENT-MODE (E-MODE) DEVICES; METAMORPHIC HIGH-ELECTRON MOBILITY TRANSISTOR (MM-HEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035366273     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925223     Document Type: Article

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