W-band power metamorphic HEMT technology on GaAs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 231-232

  Herrick, K J ^a   Whelan, C S ^a   Marsh, P F ^a   Lardizabal, S ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN MEASUREMENT; MICROELECTRONIC PROCESSING; MICROSTRIP DEVICES; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; AMPLIFIERS (ELECTRONIC); ARSENIC COMPOUNDS; ELECTRIC BREAKDOWN; ELECTRIC POWER MEASUREMENT; GALLIUM PHOSPHIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM; INDIUM COMPOUNDS; INDIUM PHOSPHIDE; POWER AMPLIFIERS;

METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR; MICROSTRIP AMPLIFIER; SINGLE CHANNEL MATERIAL; SPLIT CHANNEL MATERIAL;

HIGH ELECTRON MOBILITY TRANSISTORS; GALLIUM ARSENIDE;

AND SPLITS; HEMTS; INDIUM GALLIUM ARSENIDE; METAMORPHIC HEMTS; MHEMTS; MICROSTRIP AMPLIFIERS; SINGLE STAGE; SMALL SIGNAL GAIN;

EID: 0038487251     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. C.S. Whelan, P.F. Marsh, W.E. Hoke, R.A. McTaggart, P.S. Lyman, P.J. Lemonias, S.M. Lardizabal, R.E. Leoni, III, S.J. Lichwala, T.E. Kazior, "Millimeter-wave low-noise and high power metamorphic HEMT amplifiers and devices on GaAs substrates," IEEE Journal of Solid State Circuits, Vol. 35, Iss. 9, pp. 1307-1311, Sept. 2000.
2. P.F. Marsh, C.S. Whelan, W.E. Hoke, R.E. Leoni III, T.E. Kazior, "Reliability of metamorphic HEMTs on GaAs substrates," GaAs Reliability Workshop Proceedings, pp. 119-132.