Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors

Applied Physics Letters

Volumn 85, Issue 21, 2004, Pages 5087-5089

  Chen, Y J ^a,b,c   Hsu, W C ^a,b,c   Lee, C S ^a,b,c   Wang, T B ^a,c   Tseng, C H ^a,c   Huang, J C ^a,c   Huang, D H ^a,c   Wu, C L ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c Transcom Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MICROELECTRONICS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TITANIUM ALLOYS;

GATE ALLOYS; GATE METALS; KINK EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 19144366152     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1823600     Document Type: Article

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