A 60GHz high power composite channel GaInAs/InP HEMT on InP substrate with LG=0.15μm

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 196-199

  Boudrissa, M ^a   Delos, E ^a   Wallaert, X ^a   Theron D ^a   De Jaeger, J C ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; GATES (TRANSISTOR); IMPACT IONIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SUBSTRATES;

COMPOSITE CHANNEL STRUCTURES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034852012     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. GaInAs/InP doable channel HEMT on InP
2. GaInAs/InP composite channel HEMTs
3. Design and characteristics of GaInAs/InP composite channel HFETs
4. GaInAs/InP composite channel HEMTs for millimeter Wave Power Applications
5. A 1.45W/mm, 30GHz InP Channel Power HEMT
6. Non selective wet chemical etching of GaAs and AlGaInP for device applications
7. Selective wet etching of Lattice Matched GaInAs/AlInAs and metamorphic GaInAs/AlInAs on using succinic acid / hydrogen peroxide solution
8. 1-xAs power HEMT breakdown voltage on Schottky layer design and device layout