Gas-source molecular beam epitaxy growth of metamorphic InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP high-electron-mobility structures on GaAs substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1004-1007

  Ouchi, Kiyoshi ^a   Mishima, Tomoyoshi ^a   Kudo, Makoto ^a   Ohta, Hiroshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Composite channel; Gas source MBE; InAsP; Metamorphic HEMT

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN; ETCHING; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; METAMORPHIC HIGH ELECTRON MOBILITY HETEROSTRUCTURES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036478765     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1004     Document Type: Conference Paper

References (10)