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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 10, 2005, Pages 7227-7233

Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films

(8) Keller, Stacia a Cantu, Pablo a,b Moe, Craig a Yuan, W U a Keller, Salka a Mishra, Umesh K a Speck, James S a Denbaars, Steven P a

a UNIVERSITY OF CALIFORNIA (United States)

b Arkansas Power Electronics International Inc (United States)

Author keywords

Aluminum gallium nitride; Compensation; Defects; Hall effect measurements; Impurities; Metalorganic chemical vapor deposition; Photoluminescence

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL DEFECTS; DOPING (ADDITIVES); HALL EFFECT; IMPURITIES; OXYGEN; PHOTOLUMINESCENCE; SILICON; THIN FILMS;

ALUMINUM GALLIUM NITRIDE; COMPENSATION;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 31544471838 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.7227 Document Type: Article

Times cited : (21)

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