SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4193-4195

Intrinsic compensation of silicon-doped AlGaN

(3) Wagener, M C a James, G R b Omnes F a

a CRHEA CNRS (France)

b NELSON MANDELA METROPOLITAN UNIVERSITY (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COMPOSITION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; HALL EFFECT; IONIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM NITRIDE; ALUMINUM VACANCY; CAPACITANCE TRANSIENTS; CAPACITANCE-VOLTAGE MEASUREMENT; DEEPENING; INTRINSIC COMPENSATION; MIDGAP STATES; OPTICAL ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0347885305 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1628396 Document Type: Article

Times cited : (25)

References (14)

1
- 0037397570
- E. Monroy, F. Omnès, and F. Calle, Semicond. Sci. Technol. 18, R33 (2003).
- (2003) Semicond. Sci. Technol. , vol.18
- Monroy, E.¹ Omnès, F.² Calle, F.³

2
- 0032045119
- A. Y. Polyakov, N. B. Smirnov, A. V.Govorkov, M. G. Mil'vidskii, J. M. Redwing, M. Shin, M. Skowronski, D. W. Greve, and R. G. Wilson, Solid-State Electron. 42, 627 (1998).
- (1998) Solid-State Electron. , vol.42 , pp. 627
- Polyakov, A.Y.¹ Smirnov, N.B.² Govorkov, A.V.³ Mil'vidskii, M.G.⁴ Redwing, J.M.⁵ Shin, M.⁶ Skowronski, M.⁷ Greve, D.W.⁸ Wilson, R.G.⁹

3
- 0035851503
- J. Li, K. B. Nam, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 79, 3245 (2001).
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3245
- Li, J.¹ Nam, K.B.² Lin, J.Y.³ Jiang, H.X.⁴

4
- 4243764726
- M. D. McCluskey, N. M. Johnson, C. G. Van de Walle, D. P. Bour, and M. Kneissl, Phys. Rev. B 80, 4008 (1998).
- (1998) Phys. Rev. B , vol.80 , pp. 4008
- McCluskey, M.D.¹ Johnson, N.M.² Van De Walle, C.G.³ Bour, D.P.⁴ Kneissl, M.⁵

5
- 0000511361
- C. G. van de Walle, Phys. Rev. B 57, 2033 (1998).
- (1998) Phys. Rev. B , vol.57 , pp. 2033
- Van De Walle, C.G.¹

6
- 0033528934
- C. Stampfl, J. Neugebauer, and C. G. Van de Walle, Mater. Sci. Eng., B 59, 253 (1999).
- (1999) Mater. Sci. Eng., B , vol.59 , pp. 253
- Stampfl, C.¹ Neugebauer, J.² Van De Walle, C.G.³

7
- 0000520868
- F. Omnès, N. Marenco, B. Beaumont, Ph. de Mierry, E. Monroy, F. Calle, and E. Muñoz, J. Appl. Phys. 86, 5286 (1999).
- (1999) J. Appl. Phys. , vol.86 , pp. 5286
- Omnès, F.¹ Marenco, N.² Beaumont, B.³ De Mierry, Ph.⁴ Monroy, E.⁵ Calle, F.⁶ Muñoz, E.⁷

8
- 0031190179
- P. Hacke and H. Okushi, Appl. Phys. Lett. 71, 524 (1997).
- (1997) Appl. Phys. Lett. , vol.71 , pp. 524
- Hacke, P.¹ Okushi, H.²

9
- 36549099903
- S. Dueñas, M. Jaraiz, J. Vicente, E. Rubio, L. Bailõn, and J. Barbolla, J. Appl. Phys. 61, 2541 (1987).
- (1987) J. Appl. Phys. , vol.61 , pp. 2541
- Dueñas, S.¹ Jaraiz, M.² Vicente, J.³ Rubio, E.⁴ Bailõn, L.⁵ Barbolla, J.⁶

10
- 0026838623
- J. Barbolla, S. Duenas, and L. Bailõn, Solid-State Electron. 35, 285 (1992).
- (1992) Solid-State Electron. , vol.35 , pp. 285
- Barbolla, J.¹ Duenas, S.² Bailõn, L.³

11
- 0000543163
- G. Lucovsky, Solid State Commun. 3, 299 (1965).
- (1965) Solid State Commun. , vol.3 , pp. 299
- Lucovsky, G.¹

12
- 0037104320
- I. Gorczyca, N. E. Christensen, and A. Svane, Phys. Rev. B 66, 075210 (2002).
- (2002) Phys. Rev. B , vol.66 , pp. 075210
- Gorczyca, I.¹ Christensen, N.E.² Svane, A.³

13
- 0642279688
- T. Mattila and R. M. Nieminen, Phys. Rev. B 55, 9571 (1997).
- (1997) Phys. Rev. B , vol.55 , pp. 9571
- Matilla, T.¹ Nieminen, R.M.²

14
- 0035893967
- K. Saarinen, T. Suski, I. Grzegory, and D. C. Look, Phys. Rev. B 64, 233201 (2001).
- (2001) Phys. Rev. B , vol.64 , pp. 233201
- Saarinen, K.¹ Suski, T.² Grzegory, I.³ Look, D.C.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.