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Volumn 188, Issue 1, 2001, Pages 117-120

High-Efficiency GaN/AlxGa1-xN Multi-Quantum-Well Light Emitter Grown on Low-Dislocation Density AlxGa1-xN

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EID: 1942425122     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<117::AID-PSSA117>3.0.CO;2-X     Document Type: Article
Times cited : (85)

References (15)
  • 6
    • 1942429333 scopus 로고
    • Doctor Thesis, School of Eng., Nagoya University, Nagoya
    • K. ITOH, Doctor Thesis, School of Eng., Nagoya University, Nagoya, 1991.
    • (1991)
    • Itoh, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.