Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy

Applied Physics Letters

Volumn 72, Issue 13, 1998, Pages 1611-1613

  Zhang, R ^a   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001017453     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121144     Document Type: Article

References (15)

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