Deposition of Hf-silicate gate dielectric on Si xGe 1-x(100): Detection of interfacial layer growth

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 616-623

  Addepalli, S ^a,b   Sivasubramani, P ^a,c   El Bouanani, M ^a   Kim, M J ^a,c   Gnade, B E ^a,c   Wallace, R M ^a,c  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b GE GLOBAL RESEARCH   (India)

^c The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC RELIABILITY; GATE DIELECTRICS; INTERFACIAL LAYERS;

ABSORPTION; ANNEALING; EPITAXIAL GROWTH; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; OXIDATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY; ULTRATHIN FILMS; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC FILMS;

EID: 3142550777     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1710494     Document Type: Article

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