Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric

Applied Physics Letters

Volumn 78, Issue 20, 2001, Pages 3085-3087

  Ngai, T ^a   Qi, W J ^a   Sharma, R ^a   Fretwell, J L ^a   Chen, X ^a   Lee, J C ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035858339     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1372204     Document Type: Article

References (12)

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