Uncertainty in measurement of overlayer thickness of thermally oxidized silicon using X-ray photoelectron spectroscopy

Surface and Interface Analysis

Volumn 29, Issue 12, 2000, Pages 891-894

  Gross, Th ^a   Lippitz, A ^a   Unger, W ^a   Guttler B ^b  

^a BAM FEDERAL INSTITUTE FOR MATERIALS RESEARCH AND TESTING   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; SUBSTRATES; THERMOOXIDATION; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON INELASTIC MEAN FREE PATHS; OVERLAYERS;

SILICON;

EID: 0034504403     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/1096-9918(200012)29:12<891::AID-SIA943>3.0.CO;2-A     Document Type: Article

References (11)

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