La2O3/Si0.3Ge0.7 p-MOSFETs with high hole mobility and good device characteristics

IEEE Electron Device Letters

Volumn 23, Issue 12, 2002, Pages 710-712

  Huang, C H ^a   Chen, S B ^a   Chin, Albert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

High k; Hole mobility; La2O3; SiGe

Indexed keywords

CAPACITANCE MEASUREMENT; DIELECTRIC PROPERTIES; ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; HOLE MOBILITY; LANTHANUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TIME DOMAIN ANALYSIS; VLSI CIRCUITS;

CAPACITANCE DENSITY; GATE DIELECTRICS; GATE OXIDE CURRENT; TIME DEPENDENT DIELECTRIC BREAKDOWN;

MOSFET DEVICES;

EID: 0037004970     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.805749     Document Type: Letter

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