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Applied Surface Science

Volumn 252, Issue 5, 2005, Pages 1826-1832

W 2 B-based ohmic contacts to n-GaN

(6) Khanna, Rohit a Pearton, S J a Ren, F a Kravchenko, I b Kao, C J c Chi, G C c

a University of Florida (United States)

b National Central University ^* (United States)

c NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

GaN based power electronic devices; Ohmic contact formation; Ti Al W 2 B Ti Au metallization scheme

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; METALLIZING; OHMIC CONTACTS; POWER ELECTRONICS; SCANNING ELECTRON MICROSCOPY;

CONTACT RESISTANCE; OHMIC CONTACT FORMATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 27944493615 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2005.03.143 Document Type: Article

Times cited : (9)

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