Tunneling 1/fγ noise in 5 nm HfO2/2.1 nm SiO2 gate stack n-MOSFETs

Solid-State Electronics

Volumn 49, Issue 5, 2005, Pages 702-707

  Simoen, E ^a   Mercha, A ^a   Pantisano, L ^a   Claeys, C ^a,b   Young, E ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Flicker noise; High k gate dielectrics; Tunneling

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; OXIDATION; OZONE; POLYSILICON; QUANTUM THEORY; SILICA; VOLTAGE CONTROL;

FLICKER NOISE; HIGH-K GATE DIELECTRICS; LOW-FREQUENCY (LF) NOISE; SPECTRAL DENSITY; TUNNELING;

MOSFET DEVICES;

EID: 14844296459     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.08.021     Document Type: Conference Paper

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